KAUST researchers Yichen Cai and Jie Shen, led by Dr. Vincent Tung, are developing electronic skin (e-skin) using 2D materials like MXenes. Their research, published in Science Advances, focuses on mimicking human skin functions like sensing and adapting to stimuli. The team leverages the unique properties of 2D materials to create flexible and efficient electronic systems for next-generation electronics. Why it matters: This work advances materials science in the region, potentially enabling breakthroughs in flexible electronics, healthcare monitoring, and robotics.
KAUST faculty received multiple gold and silver medals at the Geneva International Exhibition of Inventions 2025. Professor Dana Alsulaiman won the IFIA Best Invention Award for "Bio-MXenes," a portable biosensor for detecting microRNA cancer biomarkers from liquid biopsies. Other awarded projects included super-resolution imaging of ferromagnetic tubulars and rapid Zika virus detection. Why it matters: The awards highlight KAUST's role as a hub for groundbreaking research, especially in medical diagnostics and AI-enhanced imaging.
KAUST researchers have demonstrated that incorporating tetrahydrotriazinium into perovskite/silicon tandem solar cells enhances both performance and stability. The additive increases hydrogen bonds in the perovskite film's crystal structure, improving power conversion efficiency to 33.7% and phase stability during testing under intense conditions. The improved cells showed more stability after 1500 hours of testing, modeling harsh environments. Why it matters: This research offers a pathway to more durable and efficient solar cells suitable for deployment in harsh climates like the Arabian Peninsula, potentially boosting renewable energy adoption in the region.
KAUST researchers collaborated with TSMC to review the potential of 2D materials in overcoming silicon limitations for microchips. They find that while 2D materials show promise, performance degrades when using scalable fabrication techniques like chemical vapor deposition. 2D materials have been integrated into some commercial products like sensors, but high-integration-density circuits are still a challenge. Why it matters: This research highlights the ongoing efforts and remaining hurdles in utilizing novel materials to advance semiconductor technology in line with industry roadmaps.
KAUST Assistant Professor Xiaohang Li has won the 2018 Harold M. Manasevit Young Investigator Award for his work in metal-organic chemical vapor deposition (MOCVD) growth of semiconductors. Li will receive the award at the 19th International Conference on Metalorganic Vapor Phase Epitaxy in Japan. The award recognizes Li's contributions to deep UV lasers, B-III-N alloys, III-oxides, and blue and green emitters. Why it matters: This award highlights KAUST's growing prominence in advanced semiconductor research and its potential impact on the optoelectronics industry.
KAUST researchers used electron tomography and X-ray photoelectron spectroscopy to study charge storage in manganese oxide electrodes for supercapacitors. They found that the electrolyte etches nanoscale openings in the manganese oxide sheets, increasing electrolyte permeability and energy density during cycling. 3D tomography revealed how the electrode's morphological evolution increases its surface area, enhancing energy densities. Why it matters: The research provides insights into improving the cycling stability of pseudocapacitive materials, which are crucial for developing high-performance supercapacitors.
KAUST researchers led by Dr. Muhammad Hussain have developed a flexible, transparent silicon-on-polymer based FinFET inspired by the folded architecture of the human brain's cortex. The team created a 3D FinFET on a flexible platform without compromising integration density or performance. They aim to demonstrate a fully flexible silicon-based computer by the end of the year. Why it matters: This research could lead to the development of ultra-mobile, foldable computers and integrated circuits, advancing the field of flexible electronics in the region.
A KAUST team led by Prof. Hussain published a paper in ACS Nano detailing their use of industry-compatible processes to create a flexible transistor with a bending radius of 0.5 mm. The transistor is constructed from a monocrystalline silicon-based substrate and uses a process that does not degrade device performance. The team's approach uses a network of trenches/holes and a back-etch process to create flexible electronics without compromising cost, yield, performance, and efficiency. Why it matters: This research paves the way for high-performance, portable electronics using silicon, a material already widely used in the electronics industry.