KAUST researchers demonstrated a new flash memory device design using gallium oxide, which can withstand harsh environments. In collaboration with the University of Michigan, KAUST researchers explained a key molecular event for the activation of an enzyme associated with cancer. The Summer 2023 issue of KAUST Discovery is now available. Why it matters: These research achievements highlight KAUST's contributions to advanced materials science and biomedical research, with potential applications in space technology and cancer treatment.
Ghada Ahmed, a fourth-year Ph.D. student at KAUST's Solar Center, researches semiconductor nanocrystals under the supervision of Assistant Professor Omar Mohammed. Her work focuses on the colloidal synthesis of quantum dots and nanocrystals with controlled sizes and shapes. She aims to understand photogenerated charge carrier dynamics and reaction mechanisms to optimize energy-efficient devices. Why it matters: This research contributes to advancements in materials science and renewable energy technologies within the Kingdom.
KAUST aims to become a leader in wide-bandgap semiconductor research, recognizing the technology's crucial role in diversifying Saudi Arabia's economy. Compound semiconductors are highlighted as the second most used type after silicon because of their superior properties. KAUST President Dr. Tony F. Chan emphasized the strategic importance of semiconductors and their potential to transform Saudi Arabia's digital economy, manufacturing, and defense industries. Why it matters: This initiative signals Saudi Arabia's strategic interest in developing a local semiconductor industry, crucial for its AI ambitions and economic diversification goals.
KAUST researchers collaborated with TSMC to review the potential of 2D materials in overcoming silicon limitations for microchips. They find that while 2D materials show promise, performance degrades when using scalable fabrication techniques like chemical vapor deposition. 2D materials have been integrated into some commercial products like sensors, but high-integration-density circuits are still a challenge. Why it matters: This research highlights the ongoing efforts and remaining hurdles in utilizing novel materials to advance semiconductor technology in line with industry roadmaps.
KAUST Professor Boon Ooi, Nobel laureate Shuji Nakamura, and colleagues are collaborating on laser-based solid state lighting (SSL) and visible light communications (VLC). The team is using gallium nitride (GaN) to develop high-performance semiconductor laser devices, leveraging nanofabrication techniques at KAUST. They demonstrated that their laser-based VLC system is over 20 times faster than LED-based Li-Fi systems. Why it matters: This research could enable faster, more energy-efficient data transmission using visible light, with potential applications in both terrestrial and underwater communication.
KAUST researchers have integrated a hexagonal boron nitride sheet into CMOS microchips, creating a hybrid 2D-CMOS microchip. This integration leverages the electrical and thermal properties of 2D materials, resulting in circuits that are smaller, more energy-efficient, and have longer lifespans. The KAUST Imaging and Characterization Core Lab contributed to the observations in this study, which involved researchers from six countries. Why it matters: This achievement represents a significant advancement in microchip miniaturization and performance, potentially impacting various electronic applications.
KAUST researchers led by Prof. Omar Mohammed developed safer scintillation materials to improve X-ray imaging. A team led by Assoc. Prof. Yoji Kobayashi discovered a calcium-based catalyst that unexpectedly synthesizes ammonia. Why it matters: These research advancements from KAUST contribute to scientific innovation in materials science and sustainable chemical processes within the region.
A KAUST research team led by Prof. Osman Bakr developed a novel antisolvent vapor-assisted crystallization (AVC) method to grow high-quality, crack-free MAPbX3 perovskite single crystals at room temperature. The resulting crystals exceeded 100 mm3 in volume and exhibited exceptionally low trap-state density (approximately 10^9 – 10^10 cm-3). The crystal quality is comparable to high-quality single crystal silicon, but grown at much lower temperatures. Why it matters: This breakthrough allows for more accurate characterization of perovskite photovoltaic properties and can accelerate improvements in solar cell efficiency.